TDA7491HV datasheet(8/26 Pages) STMICROELECTRONICS

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Electrical specifications

TDA7491HV

8/26

RdsON

Power transistor on resistance

High side

0.2

Ω

Low side

0.2

Output power

THD = 10%

THD = 1%

Output power

RL = 8 Ω, THD = 10%

VCC = 12 V

9.5

RL = 8 Ω, THD = 1%

VCC = 12 V

7.2

Dissipated power

Po = 20 W + 20 W,

THD = 10%

4.0

Efficiency

Po = 20 W + 20 W

THD

Total harmonic distortion

Po = 1 W

0.1

0.4

Closed loop gain

GAIN0 = L, GAIN1 = L

GAIN0 = L, GAIN1 = H

GAIN0 = H, GAIN1 = L

GAIN0 = H, GAIN1 = H

∆G

Gain matching

-1

Cross talk

f = 1 kHz

Total input noise

A Curve, GV = 20 dB

µV

f = 22 Hz to 22 kHz

SVRR

Supply voltage rejection ratio

Fr = 100 Hz, Vr = 0.5 V,

CSVR = 10 µF

Tr, Tf

Rise and fall times

FSW

Switching frequency

Internal oscillator

290

310

330

kHz

FSWR

Output switching frequency

With internal oscillator (1)

250

kHz

With external oscillator (2) 250

VinH

Digital input high (H)

2.3

VinL

Digital input low (L)

0.8

Function

mode

Standby, mute and play modes

STBY < 0.5 V, MUTE = X

Standby

STBY > 2.5 V, MUTE < 1 V Mute

STBY > 2.5 V, MUTE > 2 V Play

AMUTE

Mute attenuation

VMute = 1 V

FSW = 10

6 / (64 * R

OSC + 440) kHz, fSYNCLK = 2 * FSW with R1 in kΩ (see Figure 22).

FSW = fSYNCLK / 2 with the frequency of the external oscillator.

Table 5.

Electrical specifications (continued)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

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