1N5822 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av)(A)

Tamb(°C)

δ=tp/T

Rth(j-a)=80°C/W

Rth(j-a)=Rth(j-l)=25°C/W

Fig. 2-1: Average forward current versus ambient

temperature (

δ=0.5) (1N5820/1N5821).

1E-3

1E-2

1E-1

1E+0

IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

δ=0.5

Fig. 3-1:

Non repetitive surge peak forward

current

versus

overload

duration

(maximum

values) (1N5820/1N5821).

1E-1

1E+0

1E+1

1E+2

1E+3

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-a)/Rth(j-a)

δ=tp/T

tp(s)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

Fig. 4: Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

printed circuit board, e(Cu)=35mm, recommended

pad layout).

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av)(A)

Tamb(°C)

δ=tp/T

Rth(j-a)=80°C/W

Rth(j-a)=Rth(j-l)=25°C/W

Fig. 2-2: Average forward current versus ambient

temperature (

δ=0.5) (1N5822).

1E-3

1E-2

1E-1

1E+0

IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

δ=0.5

Fig. 3-2:

Non repetitive surge peak forward

current

versus

overload

duration

(maximum

values) (1N5822).

100

600

C(pF)

VR(V)

1N5822

1N5820

1N5821

F=1MHz

Tj=25°C

Fig. 5: Junction capacitance versus reverse

voltage applied (typical values).

1N582x

3/5

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