1N5822 datasheet(4/5 Pages) STMICROELECTRONICS

4 / 5 page

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

IR(mA)

VR(V)

Tj=100°C

Tj=25°C

1N5820

1N5821

Tj=125°C

Fig. 6-1: Reverse leakage current versus reverse

voltage applied (typical values) (1N5820/1N5821).

1E-3

1E-2

1E-1

1E+0

1E+1

5E+1

IR(mA)

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

Fig. 6-2: Reverse leakage current versus reverse

voltage applied (typical values) (1N5822).

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0.01

0.10

1.00

10.00

50.00

IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 7-1: Forward voltage drop versus forward

current (typical values) (1N5820/1N5821).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.10

1.00

10.00

50.00

IFM(A)

VFM(V)

Tj=25°C

Tj=100°C

Tj=125°C

Fig. 7-2: Forward voltage drop versus forward

current (typical values) (1N5822).

100

1000

100

IFSM(A)

Number of cycles

F=50Hz

Tj initial=25°C

Fig. 8: Non repetitive surge peak forward current

versus number of cycles.

1N582x

4/5

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