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2N2369A Datasheet(PDF) 1 Page - STMicroelectronics |
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2N2369A Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() 2N2369A November 1988 HIGH-SPEED SATURATED SWITCH The 2N2369A is a silicon planar epitaxial NPN tran- sistor in Jedec TO-18 metal case. It is designed spe- cifically for high-speed saturated switching applica- tions at current levels from 100 µA to 100 mA. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit VCB O Collector-base Voltage (I E =0) 40 V VCE S Collector-emitter Voltage (V BE =0) 40 V VCE O Collector-emitter Voltage (I B =0) 15 V VEB O Emitter-base Voltage (I C = 0) 4.5 V I C Collector Current 0.2 A I CM Collector Current (10 µs pulse) 0.5 A Pto t Total Power Dissipation at Tamb ≤ 25 °C at T case ≤ 25 °C at T case ≤ 100 °C 0.36 1.2 0.68 W W W T stg,Tj Storage and Junction Temperature – 65 to 200 °C TO-18 DESCRIPTION INTERNAL SCHEMATIC DIAGRAM 1/6 |
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