2N2369A datasheet(2/6 Pages) STMICROELECTRONICS

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ELECTRICAL CHARACTERISTICS (Tamb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CBO

Collector Cutoff

Current (I E =0)

V CB =20 V

T amb =150

°C30

µA

I CES

Collector Cutoff

Current (VBE =0)

V CE = 20 V

0.4

µA

V (BR) CBO

Collector-base

Breakdown Voltage

(I E =0)

I C =10

µA40

V(BR)CES

Collector-emitter

Breakdown Voltage

(V BE =0)

I C =10 µA40

V(B R)CEO *

Collector-emitter

Breakdown Voltage

(I B =0)

I C =10 mA

V (BR) EBO

Emitter-base

Breakdown Voltage

(I C =0)

I E =10 µA

4.5

VCE (s at )*

Collector-emitter

Saturation Voltage

I C =10 mA

I C =30 mA

I C = 100 mA

I C =10 mA

T amb =125 °C

I B =1 mA

I B =3 mA

I B =10 mA

I B =1 mA

0.14

0.17

0.28

0.19

0.2

0.25

0.5

0.3

VBE (s at) *

Base-emitter

Saturation Voltage

I C =10 mA

I B =30 mA

I C = 100 mA

I C =10 mA

T amb =– 55

I B =1 mA

I B =3 mA

I B =10 mA

I B =1 mA

to 125

°C

0.7

0.59

0.8

0.9

1.1

0.85

1.15

1.6

1.02

h FE*

DC Current Gain

I C =10 mA

I C =30 mA

I C = 100 mA

VCE = 0.35 V

VCE =1 V

VCE = 0.4 V

VCE =1 V

120

h FE*

DC Current Gain

I C =10 mA

T amb =– 55

°C

VCE = 0.35 V

f T

Transition Frequency

I C =10 mA

f= 100 MHz

VCE = 10 V

500

675

MHz

CCB O

Collector-base

Capacitance

I E =0

f= 1 MHz

VCB = 5 V

2.3

t s **

Storage Time

I C =10 mA

I B1 =

VCC =10 V

–I B2 =10 mA

613

t on **

Turn-on Time

I C =10 mA

I B1 =3 mA

VCC =3 V

t off**

Turn-off Time

I C =10 mA

I B1 =3 mA

VCC =3 V

I B2 = – 1.5 mA

* Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

THERMAL DATA

Rth j-c ase

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

146

486

°C/W

2N2369A

2/6

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