CSD22204W

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SLPS559 – MARCH 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = –250 μA

–8

V

BVGSS

Gate-to-Source Voltage

VDS = 0 V, IG = –5 μA

–6

V

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = –6.4 V

–1

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = –6 V

–4

μA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = –250 μA

–0.45

–0.7

–0.95

V

VGS = –2.5 V, IDS = –2 A

11.5

14.0

m

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = –4.5 V, IDS = –2 A

8.2

9.9

m

Ω

gƒs

Transconductance

VDS = –0.8 V, IDS = –2 A

18

S

DYNAMIC CHARACTERISTICS

CISS

Input Capacitance

870

1130

pF

VGS = 0 V, VDS = –4 V,

COSS

Output Capacitance

445

580

pF

ƒ = 1 MHz

CRSS

Reverse Transfer Capacitance

204

265

pF

RG

Series Gate Resistance

300

Ω

Qg

Gate Charge Total (–4.5 V)

18.9

24.6

nC

Qgd

Gate Charge - Gate-to-Drain

4.2

nC

VDS = –4 V,

ID = –2 A

Qgs

Gate Charge - Gate-to-Source

3.2

nC

Qg(th)

Gate Charge at Vth

0.7

nC

QOSS

Output Charge

VDS = –4 V, VGS = 0 V

3.1

nC

td(on)

Turn On Delay Time

58

ns

tr

Rise Time

600

ns

VDS = –4 V, VGS = –4.5 V,

IDS = –2 A, RG = 0 Ω

td(off)

Turn Off Delay Time

3450

ns

tƒ

Fall Time

2290

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

IDS = –2 A, VGS = 0 V

–0.7

–1.0

V

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

TYPCIAL VALUES

UNIT

Junction-to-Ambient Thermal Resistance(1)

75

RθJA

°C/W

Junction-to-Ambient Thermal Resistance(2)

230

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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