-VGS - Gate-To-Source Voltage (V)

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

0

4

8

12

16

20

24

28

32

D007

TC = 25°C, I D = -2 A

TC = 125°C, I D = -2 A

Qg - Gate Charge (nC)

0

2

4

6

8

10

12

14

16

18

20

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

D004

ID = -2 A

VDS = -4 V

G

S

S

S

S

S

D

D

D

Gate

Source

Drain

Product

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CSD22204W

SLPS559 – MARCH 2015

CSD22204W –8 V P-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

Low Resistance

TA = 25°C

TYPICAL VALUE

UNIT

•

Small Footprint 1.5 mm × 1.5 mm

VDS

Drain-to-Source Voltage

–8

V

•

Pb Free

Qg

Gate Charge Total (–4.5 V)

18.9

nC

Qgd

Gate Charge Gate-to-Drain

4.2

nC

•

Gate ESD Protection

VGS = –2.5 V

11.5

m

Ω

•

RoHS Compliant

RDS(on)

Drain-to-Source On-Resistance

VGS = –4.5 V

8.2

m

Ω

•

Halogen Free

VGS(th)

Threshold Voltage

–0.7

V

•

Gate-Source Voltage Clamp

Ordering Information(1)

2 Applications

Device

Qty

Media

Package

Ship

•

Battery Management

CSD22204W

3000

7-Inch Reel

1.5 mm × 1.5 mm

Tape and

Wafer BGA

•

Battery Protection

Reel

CSD22204WT

250

7-Inch Reel

Package

•

Load Switch Applications

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

This –8 V, 8.2 m

Ω, 1.5 mm × 1.5 mm device is

.

Absolute Maximum Ratings

designed to deliver the lowest on resistance and gate

charge in the smallest outline possible with excellent

TA = 25°C

VALUE

UNIT

thermal characteristics in an ultra low profile. Low on-

VDS

Drain-to-Source Voltage

–8

V

resistance coupled with the small footprint and low

VGS

Gate-to-Source Voltage

–6

V

profile make the device ideal for battery operated

Continuous Drain Current(1)

–5

A

ID

space constrained applications.

Pulsed Drain Current(2)

–80

A

PD

Power Dissipation

1.7

W

Top View and Circuit Configuration

TJ,

Operating Junction and

–55 to 150

°C

Tstg

Storage Temperature Range

(1) Device operating at a temperature of 105ºC.

(2) Typ RθJA = 75°C/W, Pulse width ≤100 μs, duty cycle ≤1%.

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.