SD103AWH

– SD103CWH

Taiwan Semiconductor

2

Version: A2502

Non-repetitive peak forward surge current

t = 8.3ms

IFSM

2

A

Junction temperature

TJ

-55 to +125

°C

Storage temperature

TSTG

-55 to +150

°C

Note:

1.

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-ambient thermal resistance(1)

RӨJA

333

°C/W

Thermal Performance Note:

1.

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Forward voltage(1)

IF = 20mA

VF

-

-

370

mV

IF = 200mA

-

-

600

Reverse breakdown voltage

SD103AWH

IR

= 100μA

VBR

40

-

-

V

SD103BWH

30

-

-

SD103CWH

20

-

-

Reverse current(2)

SD103AWH

VR = 30V

IR

-

-

5

μA

SD103BWH

VR = 20V

SD103CWH

VR = 10V

Junction capacitance

f = 1MHz, VR = 0V

CJ

-

-

50

pF

Reverse recovery time

IF = IR = 200mA,

IRR = 20mA, RL =

100Ω

trr

-

10

-

ns

Notes:

1.

Pulse test with PW=0.3 ms

2.

Pulse test with PW=30 ms

ORDERING INFORMATION

ORDERING CODE

PACKAGE

PACKING

DEVICE MARKING

SD103AWH RHG

SOD-123

3,000 / 7” Tape & Reel

S4

SD103BWH RHG

SOD-123

3,000 / 7” Tape & Reel

S5

SD103CWH RHG

SOD-123

3,000 / 7” Tape & Reel

S6