VN2010L/BS107

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Threshold Region

Capacitance

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

Gate Charge

Load Condition Effects on Switching

t1 – Square Wave Pulse Duration (sec)

ID – Drain Current (A)

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

Qg – Total Gate Charge (pC)

10

1

0.01

0

0.4

0.1

0.8

1.2

1.6

2.0

VDS = 5 V

TJ = 150

_C

–55

_C

25

_C

60

50

40

0

010

50

30

20

20

30

40

10

C oss

C iss

C rss

VGS = 0 V

f

= 1 MHz

15.0

12.5

10.0

0

0

250

1250

7.5

5.0

500

750

1000

2.5

I D = 0.1 A

160 V

VDS = 100 V

0.01

0.1

1.0

100

10

1

50

20

5

2

VDD = 25 V

RG = 25

W

VGS = 0 to 10 V

10 K

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

1

0.01

0.1

0.01

0.1

1

100

10

1 K

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 156

_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

Notes:

PDM

t2

td(off)

td(on)

tr

tf