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TSM7900D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM7900D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page ![]() TSM7900D 20V Dual N-Channel MOSFET w/ESD Protected 1/6 Version: A07 TDFN 3x3 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package Packing TSM7900DCQ RL TDFN 3x3 T&R Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current, VGS @4.5V. ID 6 A Pulsed Drain Current, VGS @4.5V IDM 30 A Continuous Source Current (Diode Conduction) a,b IS 1.4 A Ta = 25 oC 1.25 Maximum Power Dissipation Ta = 75 oC PD 0.8 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Foot (Drain) Thermal Resistance RӨJF 30 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 50 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 32 @ VGS = 4.5V 6.5 20 40 @ VGS = 2.5V 5.0 Block Diagram Dual N-Channel MOSFET Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain |
Similar Part No. - TSM7900D |
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Similar Description - TSM7900D |
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