TS1935

1.6MHz Boost Converter

with 30V Internal FET Switch

2/8

Version: A07

Absolute Maximum Rating

Parameter

Symbol

Limit

Unit

Input Voltage

6

V

V

SW Voltage

30

V

Ambient Temperature Range

-40 to +85

Junction Temperature Range

-40 to +125

Storage Temperature Range

-65 to +150

ESD Classification

B*

Note: Stress above the listed absolute maximum rating may cause permanent damage to the device

* HBM B: 2000~3999V

Thermal Information

Parameter

Symbol

Maximum

Unit

Thermal Resistance* (Junction to Case)

81

Thermal Resistance* (Junction to Ambient)

260

Internal Power Dissipation

400

mW

Maximum Junction Temperature

150

Solder Iron (10 Sec)**

350

** MIL-STD-202G210F

Pin Description

Pin Number

Pin Name

Description

1

SW

Power Switch Input.

This is the drain of the internal NMOS power switch.

Minimize the metal trace area connected to this pin to minimize EMI.

2

GND

Ground. Tie directly to ground plan.

3

FB

Output voltage feedback input.

Set the output voltage by selecting values for R1 and R2 using:

Connect the ground of the feedback network to a GND plane.

4

EN

Enable, active high.

The enable pin is an active high control. Tie this pin above 2V to enable the device.

Tie this pin below 0.4V to turn off the device.

5

IN

Analog and Power input. Input Supply Pin.

Place bypass capacitor as close to Vin as possible.