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PB210BD Datasheet(PDF) 3 Page - NIKO SEMICONDUCTOR CO., LTD.

Part # PB210BD
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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Manufacturer  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.niko-sem.com
Logo NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

PB210BD Datasheet(HTML) 3 Page - NIKO SEMICONDUCTOR CO., LTD.

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REV 1.0
3
Aug-19-2009
N-Channel Enhancement Mode
Field Effect Transistor
PB210BD
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Source-Drain Diode Forward Voltage
VGS =2.5V
VGS =3.5V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
25℃
℃
℃
℃
125℃
℃
℃
℃
-20℃
℃
℃
℃
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
0
2
4
6
8
10
0
3
6
9
12
15
18
ID=6A
VDS=50V
Ciss
Coss
Crss
0.00E+00
2.00E+02
4.00E+02
6.00E+02
8.00E+02
1.00E+03
0
5
10
15
20
25
30
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
-25
0
25
50
75
100
125
150
RDS(ON) ╳
╳
╳
╳
VGS=10V
ID=6A
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
RDS(ON) ╳
╳
╳
╳
0.2
0.4
0.6
0.8
1.0
1.2
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E+02
1.0E+03
1.4
TJ =25° C
TJ =150° C
Output Characteristics
Transfer Characteristics
VGS, Gate-To-Source Voltage(V)
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
TJ , Junction Temperature(˚C)
Capacitance Characteristic
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
Characteristics
Qg , Total Gate Charge
VSD, Source-To-Drain Voltage(V)



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