PB210BD datasheet(4/4 Pages) NIKOSEM

Part #	PB210BD

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.niko-sem.com

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4 / 4 page

REV 1.0

Aug-19-2009

N-Channel Enhancement Mode

Field Effect Transistor

PB210BD

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

single Pluse

Duty Cycle=0.5

0.2

0.1

0.05

0.02

0.01

1.00E-03

1.00E-02

1.00E-01

1.00E+00

1.00E+01

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

VDS, Drain-To-Source Voltage(V)

Note

1.Duty cycle, D= t1 / t2

2.RthJC =

3 ℃

℃

℃/W

3.TJ-TC = P*RthJC(t)

4.RthJC(t) = r(t)*RthJC

200

400

600

800

1000

0.0001

0.001

0.01

0.1

SINGLE PULSE

RθJC = 3˚

˚˚

˚ C/W

TC=25˚

˚˚

˚ C

1m s

100us

100m s

10m s

0.1

100

1000

NOTE :

1.VGS= 10V

2.TC=25˚

˚˚

˚ C

3.RθJC = 3˚

˚˚

˚ C/W

4.Single Pulse

Operation in This

Area is Lim ited by

RDS(ON)

↓

Safe Operating Area

Single Pulse Maximum Power Dissipation

Single Pulse Time(s)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration[sec]

PB210BD Datasheet(PDF) 4 Page - NIKO SEMICONDUCTOR CO., LTD.

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