DDTD (xxxx) C

Document number: DS30384 Rev. 10 - 2

2 of 4

www.diodes.com

January 2009

© Diodes Incorporated

DDTD (xxxx) C

Electrical Characteristics - R1, R2 Types @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Input Voltage

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

Vl(OFF)

0.5

0.5

0.5

0.5

0.5

0.3

0.3

0.3

⎯

⎯

V

VCC = 5V, IO = 100μA

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

Vl(ON)

⎯

⎯

3.0

3.0

3.0

3.0

3.0

2.0

2.0

2.0

V

VO = 0.3V, IO = 20mA

VO = 0.3V, IO = 20mA

VO = 0.3V, IO = 20mA

VO = 0.3V, IO = 10mA

VO = 0.3V, IO = 30mA

VO = 0.3V, IO = 20mA

VO = 0.3V, IO = 20mA

VO = 0.3V, IO = 20mA

Output Voltage

VO(ON)

⎯

⎯

0.3V

V

IO/Il = -50mA/-2.5mA

Input Current

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

Il

⎯

⎯

7.2

3.8

1.8

0.88

28

7.2

3.6

2.4

mA

VI = 5V

Output Current

IO(OFF)

⎯

⎯

0.5

μA VCC = 50V, VI = 0V

DC Current Gain

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

Gl

33

39

47

56

47

56

56

56

⎯

⎯

⎯

VO = 5V, IO = 50mA

Input Resistor Tolerance

ΔR1

-30

⎯

+30

%

⎯

Resistance Ratio Tolerance

Δ(R2/R1)

-20

⎯

+20

%

⎯

Gain-Bandwidth Product*

fT

⎯

200

⎯

MHz

VCE = 10V, IE = 5mA,

f = 100MHz

Electrical Characteristics - R1 Only, R2 Only Types @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

50

⎯

⎯

V

IC = 50μA

Collector-Emitter Breakdown Voltage

BVCEO

40

⎯

⎯

V

IC = 1mA

Emitter-Base Breakdown Voltage

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

BVEBO

5

⎯

⎯

V

IE = 50μA

IE = 50μA

IE = 50μA

IE = 720μA

Collector Cutoff Current

ICBO

⎯

⎯

0.5

μA

VCB = 50V

Emitter Cutoff Current

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

IEBO

⎯

⎯

⎯

300

⎯

0.5

0.5

0.5

580

μA

VEB = 4V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

⎯

0.3

V

IC = 50mA, IB = 2.5mA

DC Current Transfer Ratio

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

hFE

100

100

100

56

250

250

250

⎯

600

600

600

⎯

⎯

IC = 50mA, VCE = 5V

Bias Resistor Tolerance

ΔR1 or ΔR2

-30

⎯

+30

%

⎯

Gain-Bandwidth Product*

fT

⎯

200

⎯

MHz

VCE = 10V, IE = -5mA,

f = 100MHz

* Transistor - For Reference Only