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TPS2145IPWPR Datasheet(PDF) 6 Page - Texas Instruments

Part # TPS2145IPWPR
Description  LDO AND DUAL SWITCH WITH CONTROLLED RISE TIMES FOR DSP AND PORTABLE APPLICATIONS
PDF  34 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS2145IPWPR Datasheet(HTML) 6 Page - Texas Instruments

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TPS2145, TPS2147
TPS2155, TPS2157
SLVS333 − AUGUST 2001
6
www.ti.com
electrical characteristics over recommended operating junction-temperature range,
2.9 V
≤ VI(VIN/SWIN1) ≤ 5.5 V, 2.9 V ≤ VI(SWIN2) ≤ 5.5 V, VI(ENx) = 0 V or VI(ENx) = 5 V,
VI(LDO_EN) = 5 V, CL(LDO_OUT) = 10 µF, TJ = −40°C to 100°C (unless otherwise noted) (continued)
adjustable voltage regulator (Vx = 1 V to 3.3 V)
PARAMETER
TEST CONDITIONS†
MIN
TYP
MAX
UNIT
VO
Output voltage, dc (see Note 2)
VI(VIN/SWIN1) =Vx + 0.6 V to 5.5 V and
VI(VIN/SWIN1) > 2.9 V,
IO = 0.5 mA to 200 mA
0.97Vx
Vx
1.03Vx
V
Dropout voltage (VIN/SWIN1 to LDO_OUT)
VI(VIN/SWIN1) = Vx − 0.1 V, IO = 200 mA
0.5
V
Line regulation voltage (see Note 1)
VI(VIN/SWIN1) = Vx + 0.6 V to 5.5 V and
VI(VIN/SWIN1) > 2.9 V,
IO = 5 mA
0.1
%/V
Load regulation voltage (see Note 1)
VI(VIN/SWIN1) = Vx + 0.6 V to 5.5 V and
VI(VIN/SWIN1) > 2.9 V,
IO = 5 mA to 200 mA
0.4%
1%
IOS
Short-circuit current limit
VI(VIN/SWIN1) = Vx + 0.6 V to 5.5 V and
VI(VIN/SWIN1) > 2.9 V,
LDO_OUT connected to GND
0.275
0.33
0.575
A
Ilkg(R)
Reverse leakage current into LDO_OUT
VO(LDO_OUT) = Vx,
VI(VIN/SWIN1) = 0 V,
VI(LDO_EN) = 0 V
10
µA
Ilkg(R)
Reverse leakage current into LDO_OUT
VO(LDO_OUT) = 5.5 V,
VI(VIN/SWIN1) = 2.8 V,
VI(LDO_EN) = 0 V
10
µA
ton
Turnoff time, LDO_EN
transitioning low (see Note 1)
From 50% LDO_EN to 10% LDO_OUT,
RL = Vx/0.2 Ω, CL(LDO_OUT) = 10 µF
0.1
1
ms
toff
Turnon time, LDO_EN
transitioning high (see Note 1)
From 50% LDO_EN to 90% LDO_OUT,
RL = Vx/0.2 Ω, CL(LDO_OUT) = 10 µF
0.1
1
ms
Ramp-up time, LDO_OUT (0% to 90%)
VI(LDO_EN) = 5 V, VIN/SWIN1 ramping up
from 10% to 90% in 0.1 ms, RL = Vx/0.2 Ω,
CL(LDO_OUT) = 10 µF
0.1
1
ms
Output tracking
OUT1 lag time from LDO_OUT given
LDO_EN and EN1 have been asserted si-
multaneously to turnon their respective out-
puts. Measured at 1 V. (see Note 1)
LDO load RL = Vx/0.2 Ω,
CL(LDO_OUT) = 10 µF,
OUT1 RL = 33 Ω, 10 µF,
VI(VIN/SWIN1) = 3.3 V
0
1
ms
Power supply rejection
f = 1 kHz, CL(LDO_OUT) = 4.7 µF,
ESR = 0.25
Ω, IO = 5 mA,
VI(VIN/SWIN1)p−p = 100 mV
50
dB
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
NOTES:
1. Specified by design, not tested in production.
2. Does not include error introduced by external resistive divider R1, R2 tolerance.



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