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ISO7830, ISO7830F

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SLLSEO2B – JULY 2015 – REVISED JUNE 2016

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Copyright © 2015–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak

voltage values.

(3)

Maximum voltage must not exceed 6 V

6 Specifications

6.1 Absolute Maximum Ratings

See

(1)

MIN

MAX

UNIT

VCC1

VCC2

Supply voltage(2)

–0.5

6

V

V

Voltage at INx, OUTx, or EN2x

–0.5

VCCx + 0.5

(3)

V

IO

Output current

–15

15

mA

TJ

Junction temperature

–55

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±6000

V

Charged device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

(1)

VCCI = Input-side VCC; VCCO = Output-side VCC.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VCC1,

VCC2

Supply voltage

2.25

5.5

V

IOH

High-level output current

VCCO

(1) = 5 V

–4

mA

VCCO

(1) = 3.3 V

–2

VCCO

(1) = 2.5 V

–1

IOL

Low-level output current

VCCO

(1) = 5 V

4

mA

VCCO

(1) = 3.3 V

2

VCCO

(1) = 2.5 V

1

VIH

High-level input voltage

0.7 × VCCI

(1)

VCCI

(1)

V

VIL

Low-level input voltage

0

0.3 × VCCI

(1)

V

DR

Signaling rate

0

100

Mbps

TA

Ambient temperature

–55

25

125

°C