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ADS7813P Datasheet(PDF) 14 Page - Texas Instruments |
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ADS7813P Datasheet(HTML) 14 Page - Texas Instruments |
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14 / 27 page ![]() ADS7813 14 SBAS043C www.ti.com The range for the external reference is 2.3V to 2.7V. The voltage on REF determines the full-scale range of the con- verter and the corresponding LSB size. Increasing the refer- ence voltage will increase the LSB size in relation to the internal noise sources which, in turn, can improve signal-to- noise ratio. Likewise, decreasing the reference voltage will reduce the LSB size and signal-to-noise ratio. CAP The CAP pin is used to compensate the internal reference buffer. A 1 µF tantalum capacitor in parallel with a 0.01µF ceramic capacitor should be connected between this pin and ground, with the ceramic capacitor placed as close to the ADS7813 as possible. The total value of the capacitance on the CAP pin is critical to optimum performance of the ADS7813. A value larger than 2.0 µF could overcompensate the buffer while a value lower than 0.5 µF may not provide adequate compensation. The ESR (equivalent series resis- tance) of these compensation capacitors is also critical. Keep the total ESR under 3 Ω. See the Typical Characteristic curve, |Worst-Case INL| vs ESR of Reference Buffer Compensation Capacitor, for how the worst-case INL is affected by ESR. BUF The voltage on the BUF pin is the output of the internal reference buffer. This pin is used to provide +2.5V to the analog input or inputs for the various input configurations. The BUF output can provide up to 1mA of current to an external load. The load should be constant as a variable load could affect the conversion result by modulating the BUF voltage. Also note that the BUF output will show significant glitches as each bit decision is made during a conversion. Between conversions, the BUF output is quiet. POWER DOWN The ADS7813 has a power-down mode that is activated by taking CONV LOW and then PWRD HIGH. This will power down all of the analog circuitry including the refer- ence, reducing power dissipation to under 50 µW. To exit the power-down mode, CONV is taken HIGH and then PWRD is taken LOW. Note that a conversion will be initiated if PWRD is taken HIGH while CONV is LOW. While in the power-down mode, the voltage on the capaci- tors connected to CAP and REF will begin to leak off. The voltage on the CAP capacitor leaks off much more rapidly than on the REF capacitor (the REF input of the ADS7813 becomes high-impedance when PWRD is HIGH—this is not true for the CAP input). When the power-down mode is exited, these capacitors must be allowed to recharge and settle to a 16-bit level. Figure 11 shows the amount of time typically required to obtain a valid 16-bit result based on the amount of time spent in power down (at room temperature). This figure assumes that the total capacitance on the CAP pin is 1.01 µF. Figure 12 provides a circuit which can significantly reduce the power up time if the power down time will be fairly brief (a few seconds or less). A low on-resistance MOSFET is used to disconnect the capacitance on the CAP pin from the leakage paths internal to the ADS7813. This allows the capacitors to retain their charge for a much longer period of time, reducing the time required to recharge them at power up. With this circuit, the power-down time can be extended to tens or hundreds of milliseconds with almost instanta- neous power up. FIGURE 12. Improved Power-Up Response Circuit. FIGURE 11. Power-Down to Power-Up Response. POWER-DOWN TO POWER-UP RESPONSE Power-Down Duration (ms) 300 250 200 150 100 50 0 0.1 1 10 100 T A = +25°C V S PWRD BUSY CS CONV EXT/INT DATA DATACLK R1 IN GND R2 IN R3 IN BUF CAP REF GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1 2 3 4 8 7 6 5 0.01µF 1µF 1RF7604 + Power-Down Signal |
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