5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = 250 μA

30

V

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 24 V

100

nA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 12 V

50

nA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = 250 μA

0.65

0.85

1.10

V

RDS(on)

Drain-to-source on-resistance

VGS = 1.8 V, IDS = 0.5 A

170

270

mΩ

VGS = 2.5 V, IDS = 0.5 A

125

160

VGS = 4.5 V, IDS = 0.5 A

107

128

VGS = 8 V, IDS = 0.5 A

99

121

gfs

Transconductance

VDS = 15 V, IDS = 0.5 A

4

S

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 15 V,

ƒ = 1 MHz

150

195

pF

Coss

Output capacitance

44

57

pF

Crss

Reverse transfer capacitance

2.2

2.9

pF

RG

Series gate resistance

8

Ω

Qg

Gate charge total (4.5 V)

VDS = 15 V, IDS = 0.5 A

920

1200

pC

Qg

Gate charge total (8.0 V)

1570

2040

pC

Qgd

Gate charge gate-to-drain

75

pC

Qgs

Gate charge gate-to-source

280

pC

Qg(th)

Gate charge at Vth

140

pC

Qoss

Output charge

VDS = 15 V, VGS = 0 V

1400

pC

td(on)

Turnon delay time

VDS = 15 V, VGS = 4.5 V,

IDS = 0.5 A, RG = 2 Ω

3

ns

tr

Rise time

1

ns

td(off)

Turnoff delay time

11

ns

tf

Fall time

4

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 0.5 A, VGS = 0 V

0.73

0.9

V

Qrr

Reverse recovery charge

VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs

1300

pC

trr

Reverse recovery time

6.2

ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

85

°C/W

Junction-to-ambient thermal resistance(2)

245

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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CSD17484F4

SLPS550D – MAY 2015 – REVISED FEBRUARY 2022

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