CSD17484F4 30-V N-Channel FemtoFET™ MOSFET

1 Features

• Low on-resistance

• Ultra-low Qg and Qgd

• Low-threshold voltage

• Ultra-small footprint (0402 Case Size)

– 1.0 mm × 0.6 mm

• Ultra-low profile

– 0.2-mm height

• Integrated ESD protection diode

– Rated > 4-kV HBM

– Rated > 2-kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.

0.20

mm

Figure 3-1. Typical Part Dimensions

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

30

V

Qg

Gate Charge Total (4.5 V)

920

pC

Qgd

Gate Charge Gate-to-Drain

75

pC

RDS(on) Drain-to-Source On-Resistance

VGS = 1.8 V

170

mΩ

VGS = 2.5 V

125

VGS = 4.5 V

107

VGS = 8.0 V

99

VGS(th) Threshold Voltage

0.85

V

Device Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD17484F4

3000

7-Inch Reel

Femto (0402)

1.00-mm × 0.60-mm

Land Grid Array (LGA)

Tape

and

Reel

CSD17484F4T

250

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

30

V

VGS

Gate-to-Source Voltage

12

V

ID

Continuous Drain Current(1)

3.0

A

IDM

Pulsed Drain Current(1) (2)

18

A

IG

Continuous Gate Clamp Current

35

mA

Pulsed Gate Clamp Current(2)

350

PD

Power Dissipation

500

mW

V(ESD)

Human-Body Model (HBM)

4

kV

Charged-Device Model (CDM)

2

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse ID = 7.1 A,

L = 0.1 mH, RG = 25 Ω

2.5

mJ

(1)

Typical RθJA = 85°C/W on 1-in2 (6.45-cm2), 2-oz

(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4

PCB.

(2)

Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

D

G

S

Figure 3-2. Top View

CSD17484F4

SLPS550D – MAY 2015 – REVISED FEBRUARY 2022

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.