5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = 250 μA

12

V

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 9.6 V

50

nA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 8 V

25

nA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = 250 μA

0.5

0.8

1.2

V

RDS(on)

Drain-to-source on resistance

VGS = 1.8 V, IDS = 0.1 A

26

50

mΩ

VGS = 2.5 V, IDS = 0.9 A

18

23

VGS = 4.5 V, IDS = 0.9 A

15

19

gfs

Transconductance

VDS = 1.2 V, IDS = 0.9 A

11.3

S

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 6 V,

ƒ = 1 MHz

519

674

pF

Coss

Output capacitance

305

396

pF

Crss

Reverse transfer capacitance

29

38

pF

RG

Series gate resistance

20

Ω

Qg

Gate charge total (4.5 V)

VDS = 6 V, IDS = 0.9 A

3.9

5.0

nC

Qgd

Gate charge gate-to-drain

0.39

nC

Qgs

Gate charge gate-to-source

0.74

nC

Qg(th)

Gate charge at Vth

0.46

nC

Qoss

Output charge

VDS = 6 V, VGS = 0 V

2.5

nC

td(on)

Turnon delay time

VDS = 6 V, VGS = 4.5 V,

IDS = 0.9 A, RG = 2 Ω

7

ns

tr

Rise time

10

ns

td(off)

Turnoff delay time

33

ns

tf

Fall time

10

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 0.9 A, VGS = 0 V

0.67

1.0

V

5.2 Thermal Information

TA = 25°C (unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

90

°C/W

Junction-to-ambient thermal resistance(2)

245

(1)

Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

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CSD13385F5

SLPS612B – OCTOBER 2016 – REVISED FEBRUARY 2022

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