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CSD18502KCS Datasheet(PDF) 3 Page - Texas Instruments

Part # CSD18502KCS
Description  CSD18502KCS 40V N-Channel NexFET™ Power MOSFET
PDF  14 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

CSD18502KCS Datasheet(HTML) 3 Page - Texas Instruments

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4 Specifications
4.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0V, ID = 250μA
40
V
IDSS
Drain-to-Source Leakage Current
VGS = 0V, VDS = 32V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0V, VGS = 20V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250μA
1.5
1.8
2.1
V
RDS(on)
Drain-to-Source On Resistance
VGS = 4.5V, ID = 100A
3.3
4.3
mΩ
VGS = 10V, ID = 100A
2.4
2.9
mΩ
gfs
Transconductance
VDS = 20V, ID = 100A
138
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0V, VDS = 20V, ƒ = 1MHz
3900
4680
pF
Coss
Output Capacitance
900
1080
pF
Crss
Reverse Transfer Capacitance
21
26
pF
RG
Series Gate Resistance
1.2
2.4
Qg
Gate Charge Total (4.5 V)
VDS = 20V, ID = 100A
25
30
nC
Qg
Gate Charge Total (10 V)
52
62
nC
Qgd
Gate Charge Gate-to-Drain
8.4
nC
Qgs
Gate Charge Gate-to-Source
10.3
nC
Qg(th)
Gate Charge at Vth
7.5
nC
Qoss
Output Charge
VDS = 20V, VGS = 0V
52
nC
td(on)
Turn On Delay Time
VDS = 20V, VGS = 10V,
IDS = 100A, RG = 0Ω
11
ns
tr
Rise Time
7.3
ns
td(off)
Turn Off Delay Time
33
ns
tf
Fall Time
9.3
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 100A, VGS = 0V
0.8
1
V
Qrr
Reverse Recovery Charge
VDS= 20V, IF = 100A,
di/dt = 300A/μs
105
nC
trr
Reverse Recovery Time
48
ns
4.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance
0.6
°C/W
RθJA
Junction-to-Ambient Thermal Resistance
62
www.ti.com
CSD18502KCS
SLPS367C – OCTOBER 2011 – REVISED MARCH 2024
Copyright © 2024 Texas Instruments Incorporated
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Product Folder Links: CSD18502KCS



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