CSD18502KCS datasheet(5/14 Pages) TI2

5 / 14 page

0.6

0.8

1.2

1.4

1.6

1.8

2.2

2.4

−75 −50 −25

100 125 150 175 200

TC - Case Temperature (ºC)

ID = 250uA

G001

Figure 4-6. Threshold Voltage vs. Temperature

VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 100A

TC = 125ºC Id = 100A

G001

Figure 4-7. On-State Resistance vs. Gate-to-Source

Voltage

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

−75 −50 −25

100 125 150 175 200

TC - Case Temperature (ºC)

VGS = 4.5V

VGS = 10V

ID = 100A

G001

Figure 4-8. Normalized On-State Resistance vs.

Temperature

0.0001

0.001

0.01

0.1

100

0.2

0.4

0.6

0.8

VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

Figure 4-9. Typical Diode Forward Voltage

0.1

100

1000

5000

0.1

100

VDS - Drain-to-Source Voltage (V)

10us

100us

1ms

10ms

Single Pulse

Max RthetaJC = 0.6ºC/W

G001

Figure 4-10. Maximum Safe Operating Area

100

0.01

0.1

TAV - Time in Avalanche (mS)

TC = 25ºC

TC = 125ºC

G001

Figure 4-11. Single Pulse Unclamped Inductive

Switching

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CSD18502KCS

SLPS367C – OCTOBER 2011 – REVISED MARCH 2024

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