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CSD18502KCS.B Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18502KCS.B Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 40 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 32V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 1.5 1.8 2.1 V RDS(on) Drain-to-Source On Resistance VGS = 4.5V, ID = 100A 3.3 4.3 mΩ VGS = 10V, ID = 100A 2.4 2.9 mΩ gfs Transconductance VDS = 20V, ID = 100A 138 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 20V, ƒ = 1MHz 3900 4680 pF Coss Output Capacitance 900 1080 pF Crss Reverse Transfer Capacitance 21 26 pF RG Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (4.5 V) VDS = 20V, ID = 100A 25 30 nC Qg Gate Charge Total (10 V) 52 62 nC Qgd Gate Charge Gate-to-Drain 8.4 nC Qgs Gate Charge Gate-to-Source 10.3 nC Qg(th) Gate Charge at Vth 7.5 nC Qoss Output Charge VDS = 20V, VGS = 0V 52 nC td(on) Turn On Delay Time VDS = 20V, VGS = 10V, IDS = 100A, RG = 0Ω 11 ns tr Rise Time 7.3 ns td(off) Turn Off Delay Time 33 ns tf Fall Time 9.3 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge VDS= 20V, IF = 100A, di/dt = 300A/μs 105 nC trr Reverse Recovery Time 48 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 0.6 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD18502KCS SLPS367C – OCTOBER 2011 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18502KCS |
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