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CSD18502KCS.B Datasheet(PDF) 4 Page - Texas Instruments |
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CSD18502KCS.B Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 14 page ![]() 4.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 4-1. Transient Thermal Impedance 0 20 40 60 80 100 120 140 160 180 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) VGS =10V VGS =6.5V VGS =4.5V G001 Figure 4-2. Saturation Characteristics 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) TC = 125°C TC = 25°C TC = −55°C VDS = 5V G001 Figure 4-3. Transfer Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 55 Qg - Gate Charge (nC) ID = 100A VDS = 20V G001 Figure 4-4. Gate Charge 10 100 1000 10000 50000 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd G001 Figure 4-5. Capacitance CSD18502KCS SLPS367C – OCTOBER 2011 – REVISED MARCH 2024 www.ti.com 4 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: CSD18502KCS |
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