5 Device and Documentation Support

5.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT

CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES

OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER

ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

5.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

5.3 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

5.4 Trademarks

NexFET™ and TI E2E™ are trademarks of Texas Instruments.

All trademarks are the property of their respective owners.

5.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

5.6 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

6 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision B (February 2017) to Revision C (November 2023)

Page

• Updated Threshold Voltage GS(th) from 0.95 V to 1.0 V................................................................................... 1

• Updated the numbering format for tables, figures, and cross-references throughout the document ................ 1

• Updated Source-to-source on resistance VGS = 2.5 V from 14 mΩ to 12 mΩ.................................................. 3

• Updated Gate-to-source threshold voltage from 0.75 V min, 0.95 V typ, 1.25 V max to 0.7 V min, 1.0 V typ,

1.4 V max........................................................................................................................................................... 3

Changes from Revision A (January 2016) to Revision B (February 2017)

Page

• Added Diode Characteristics (VF(S-S)) in the Electrical Characteristics table..................................................... 3

• Added Figure 4-9 to Typical MOSFET Characteristics section.......................................................................... 4

Changes from Revision * (November 2014) to Revision A (January 2016)

Page

• Improved graph setup for readability.................................................................................................................. 4

CSD83325L

SLPS494C – NOVEMBER 2014 – REVISED NOVEMBER 2023

www.ti.com

6

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