5.6 Thermal Information

THERMAL METRIC (1)

TSD12-Q1 / TSD15-Q1 / TSD18-Q1 / TSD24-Q1 /

TSD36-Q1

UNIT

DYF (SOD-323)

2 PINS

RθJA

Junction-to-ambient thermal resistance

693.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

254.7

°C/W

RθJB

Junction-to-board thermal resistance

566.6

°C/W

ΨJT

Junction-to-top characterization parameter

78.6

°C/W

ΨJB

Junction-to-board characterization parameter

552.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.7 Electrical Characteristics - TSD12-Q1

At TA=25℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

12

V

VBR

Breakdown voltage

IIO = 10mA, IO to GND

12.7

V

ILEAK

Reverse leakage

current

VIO = 12V, IO to GND

2

20

nA

VFWD

Forward voltage

IIO = 1mA, GND to IO

0.7

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 1A, IO to GND

18

V

IPP = 5A, IO to GND

19

V

IPP = 18A, IO to GND

23

V

IPP = 18A, GND to IO

8

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND

17

V

IPP =16A, GND to IO

3

V

CL

Line capacitance

VIO = 0V; ƒ = 1MHz, IO to GND

12

pF

(1)

Typical parameters are measured at 25

℃

(2)

Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5

5.8 Electrical Characteristics - TSD15-Q1

At TA=25℃ (unless otherwise noted) (1)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off

voltage

IIO <50nA, across operating temperature range

15

V

VBR

Breakdown voltage

IIO = 10mA, IO to GND

18.3

V

ILEAK

Reverse leakage

current

VIO = 15V, IO to GND

2

20

nA

VFWD

Forward voltage

IIO = 10mA, GND to IO

0.7

V

VCLAMP

Surge clamping voltage,

tp = 8/20µs (2)

IPP = 1A, IO to GND

25

V

IPP = 5A, IO to GND

26

V

IPP = 15A, IO to GND

31

V

IPP = 15A, GND to IO

7

V

TLP clamping

voltage, tp = 100ns

IPP = 16A, IO to GND

23

V

IPP =16A, GND to IO

3

V

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