AP74701Q

Document number: DS46952 Rev. 2 - 2

3 of 22

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February 2025

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AP74701Q

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) (Note 4)

Symbol

Parameter

Ratings

Unit

ESD HBM

Human Body ESD Protection

±2

kV

ESD CDM

Charged Device Model ESD Protection

±750

V

ANODE to GND

Input Voltage at ANODE

-(VCLAMP - 1) to +65

V

SW and EN to GND

Voltage at SW and EN, VANODE > 0V

-0.3 to +65

V

EN to GND

Voltage at EN, VANODE ≤ 0V

VANODE to (VANODE + 65)

V

SW to GND

Voltage at SW, VANODE ≤ 0V

VANODE to (VANODE + 0.3)

V

ISW

SW Switch Current

-1 to 3mA

A

GATE to ANODE

Gate to Anode Voltage

-0.3 to +15

V

VCP to ANODE

Charge Pump Voltage

-0.3 to +15

V

CATHODE to ANODE

CATHODE to ANODE Voltage

-5 to VCLAMP

V

TJ(max)

Maximum Junction Temperature

-40 to +150

°C

TSTG

Storage Temperature

-40 to +150

°C

RθJA

Junction-to-Ambient Thermal Resistance (Note 5)

176.9

°C/W

RθJC(top)

Junction-to-Case (Top) Thermal Resistance (Note 5)

122.0

°C/W

RθJB

Junction-to-Board Thermal Resistance (Note 5)

46.0

°C/W

ΨJT

Junction-to-Top Characterization Parameter (Note 5)

10.2

°C/W

ΨJB

Junction-to-Board Characterization Parameter (Note 5)

44.9

°C/W

Notes:

4. Stresses greater than the Absolute Maximum Ratings specified above can cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability can be

affected by exposure to absolute maximum rating conditions for extended periods of time.

5. RJA and RJC are measured at TA = +25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.

Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Unit

ANODE to GND

Input Voltage at ANODE

-33

+60

V

CATHODE to GND

Input Voltage at CATHODE

—

+60

V

EN to GND

Voltage at Enable Pin

-33

+60

V

ANODE to CATHODE

ANODE to CATHODE Voltage

-VCLAMP

5

V

GATE to ANODE

Gate to Anode Voltage

0

+15

V

VCP to ANODE

Charge Pump Voltage

0

+15

V

CATHODE to ANODE

CATHODE to ANODE Voltage

—

70

V

Anode Cap

Input Capacitor (Note 6)

0.1

1

µF

VCP to Anode Cap

Charge Pump Cap (Note 6)

0.1

—

µF

External MOSFET VGS max

Gate to Anode (Note 6)

15

—

V

TJ

Operating Junction Temperature Range

-40

+125

°C

Note:

6. Refer to the typical application circuit.