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Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's

part number unchanged.

Memory FeRAM

1 M Bit (128 K  8)

MB85R1001A

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DESCRIPTIONS

The MB85R1001A is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 131,072

words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

process technologies.

The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R1001A can be used for 1010 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

The MB85R1001A uses a pseudo-SRAM interface.



FEATURES

• Bit configuration

: 131,072 words  8 bits

• Read/write endurance

: 1010 times / byte

• Data retention

: 10 years (  55 C), 55 years (  35 C)

• Operating power supply voltage

: 3.0 V to 3.6 V

• Low power operation

: Operating power supply current 10 mA (Typ)

Standby current 10 A (Typ)

• Operation ambient temperature range :  40 C to  85 C

• Package

: 48-pin plastic TSOP

RoHS compliant

DS501-00003-6v1-E