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AMC1100DWVR Datasheet(PDF) 7 Page - Texas Instruments |
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AMC1100DWVR Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 38 page ![]() 7 AMC1100 www.ti.com SBAS562B – APRIL 2012 – REVISED DECEMBER 2019 Product Folder Links: AMC1100 Submit Documentation Feedback Copyright © 2012–2019, Texas Instruments Incorporated 6.9 Electrical Characteristics All minimum and maximum specifications are at TA = –40°C to +105°C and are within the specified voltage range, unless otherwise noted. Typical values are at TA = +25°C, VDD1 = 5 V, and VDD2 = 3.3 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT Maximum input voltage before clipping VINP – VINN ±320 mV Differential input voltage VINP – VINN –250 250 mV VCM Common-mode operating range –0.16 VDD1 V VOS Input offset voltage –1.5 ±0.2 1.5 mV TCVOS Input offset thermal drift –10 ±1.5 10 µV/K CMRR Common-mode rejection ratio VIN from 0 V to 5 V at 0 Hz 108 dB VIN from 0 V to 5 V at 50 kHz 95 dB CIN Input capacitance to GND1 VINP or VINN 3 pF CIND Differential input capacitance 3.6 pF RIN Differential input resistance 28 k Ω Small-signal bandwidth 60 100 kHz OUTPUT Nominal gain 8 GERR Gain error Initial, at TA = +25°C –0.5% ±0.05% 0.5% –1% ±0.05% 1% TCGERR Gain error thermal drift ±56 ppm/K Nonlinearity 4.5 V ≤ VDD2 ≤ 5.5 V –0.075% ±0.015% 0.075% 2.7 V ≤ VDD2 ≤ 3.6 V –0.1% ±0.023% 0.1% Nonlinearity thermal drift 2.4 ppm/K Output noise VINP = VINN = 0 V 3.1 mVRMS PSRR Power-supply rejection ratio vs VDD1, 10-kHz ripple 80 dB vs VDD2, 10-kHz ripple 61 dB Rise-and-fall time 0.5-V step, 10% to 90% 3.66 6.6 µs VIN to VOUT signal delay 0.5-V step, 50% to 10%, unfiltered output 1.6 3.3 µs 0.5-V step, 50% to 50%, unfiltered output 3.15 5.6 µs 0.5-V step, 50% to 90%, unfiltered output 5.26 9.9 µs CMTI Common-mode transient immunity VCM = 1 kV 2.5 3.75 kV/µs Output common-mode voltage 2.7 V ≤ VDD2 ≤ 3.6 V 1.15 1.29 1.45 V 4.5 V ≤ VDD2 ≤ 5.5 V 2.4 2.55 2.7 V Short-circuit current 20 mA ROUT Output resistance 2.5 Ω POWER SUPPLY IDD1 High-side supply current 5.4 8 mA IDD2 Low-side supply current 2.7 V < VDD2 < 3.6 V 3.8 6 mA 4.5 V < VDD2 < 5.5 V 4.4 7 mA PDD1 High-side power dissipation 27.0 44.0 mW PDD2 Low-side power dissipation 2.7 V < VDD2 < 3.6 V 11.4 21.6 mW 4.5 V < VDD2 < 5.5 V 22.0 38.5 mW |
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