7.4 Thermal Information

THERMAL METRIC(1)

DWV (SOIC)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

84.6

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

28.3

°C/W

RθJB

Junction-to-board thermal resistance

41.1

°C/W

ΨJT

Junction-to-top characterization parameter

4.9

°C/W

ΨJB

Junction-to-board characterization parameter

39.1

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Power Ratings

PARAMETER

TEST CONDITIONS

VALUE

UNIT

PD

Maximum power dissipation (both sides)

VDD1 = VDD2 = 5.5 V

98

mW

VDD1 = VDD2 = 3.6V, AMC1311B only

56

PD1

Maximum power dissipation (high-side)

VDD1 = 5.5 V

53

mW

VDD1 = 3.6 V, AMC1311B only

30

PD2

Maximum power dissipation (low-side)

VDD2 = 5.5 V

45

mW

VDD2 = 3.6 V, AMC1311B only

26

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AMC1311

SBAS786C – DECEMBER 2017 – REVISED JUNE 2022

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