| Electronic Components Datasheet Search |
|
CC1350 Datasheet(PDF) 13 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
CC1350 Datasheet(HTML) 13 Page - Texas Instruments |
|
13 / 79 page ![]() 8.6 Power Consumption - Radio Modes When measured on the CC1312REM-XD7793 reference design with Tc = 25 °C, VDDS = 3.6 V with DC/DC enabled unless otherwise noted. Using boost mode (increasing VDDR up to 1.95 V), will increase system current by 15% (does not apply to TX +14 dBm setting where this current is already included). Relevant Icore and Iperi currents are included in below numbers. PARAMETER TEST CONDITIONS TYP UNIT Radio receive current, 868 MHz 5.8 mA Radio transmit current 0 dBm output power setting 868 MHz 8.0 mA +10 dBm output power setting 868 MHz 14.3 mA Radio transmit current Boost mode +14 dBm output power setting 868 MHz 24.9 mA 8.7 Nonvolatile (Flash) Memory Characteristics Over operating free-air temperature range and VDDS = 3.0 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Flash sector size 8 KB Supported flash erase cycles before failure, full bank(1) (5) 30 k Cycles Supported flash erase cycles before failure, single sector(2) 60 k Cycles Maximum number of write operations per row before sector erase(3) 83 Write Operations Flash retention 105 °C 11.4 Years at 105 °C Flash sector erase current Average delta current 10.7 mA Flash sector erase time(4) Zero cycles 10 ms Flash write current Average delta current, 4 bytes at a time 6.2 mA Flash write time(4) 4 bytes at a time 21.6 µs (1) A full bank erase is counted as a single erase cycle on each sector (2) Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k cycles (3) Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number of write operations per row is reached. (4) This number is dependent on Flash aging and increases over time and erase cycles (5) Aborting flash during erase or program modes is not a safe operation. www.ti.com CC1312R SWRS210H – JANUARY 2018 – REVISED NOVEMBER 2020 Copyright © 2020 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: CC1312R |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |