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CC1350 Datasheet(PDF) 13 Page - Texas Instruments

Part # CC1350
Description  CC1312R SimpleLink™ High-Performance Sub-1 GHz Wireless MCU
PDF  79 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

CC1350 Datasheet(HTML) 13 Page - Texas Instruments

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8.6 Power Consumption - Radio Modes
When measured on the CC1312REM-XD7793 reference design with Tc = 25 °C, VDDS = 3.6 V with DC/DC enabled unless
otherwise noted.
Using boost mode (increasing VDDR up to 1.95 V), will increase system current by 15% (does not apply to TX +14 dBm
setting where this current is already included).
Relevant Icore and Iperi currents are included in below numbers.
PARAMETER
TEST CONDITIONS
TYP
UNIT
Radio receive current, 868 MHz
5.8
mA
Radio transmit current
0 dBm output power setting
868 MHz
8.0
mA
+10 dBm output power setting
868 MHz
14.3
mA
Radio transmit current
Boost mode
+14 dBm output power setting
868 MHz
24.9
mA
8.7 Nonvolatile (Flash) Memory Characteristics
Over operating free-air temperature range and VDDS = 3.0 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Flash sector size
8
KB
Supported flash erase cycles before failure, full bank(1)
(5)
30
k Cycles
Supported flash erase cycles before failure, single
sector(2)
60
k Cycles
Maximum number of write operations per row before
sector erase(3)
83
Write
Operations
Flash retention
105 °C
11.4
Years at
105 °C
Flash sector erase current
Average delta current
10.7
mA
Flash sector erase time(4)
Zero cycles
10
ms
Flash write current
Average delta current, 4 bytes at a time
6.2
mA
Flash write time(4)
4 bytes at a time
21.6
µs
(1)
A full bank erase is counted as a single erase cycle on each sector
(2)
Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k
cycles
(3)
Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per
write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum
number of write operations per row is reached.
(4)
This number is dependent on Flash aging and increases over time and erase cycles
(5)
Aborting flash during erase or program modes is not a safe operation.
www.ti.com
CC1312R
SWRS210H – JANUARY 2018 – REVISED NOVEMBER 2020
Copyright © 2020 Texas Instruments Incorporated
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Product Folder Links: CC1312R



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