BYW51F datasheet(2/9 Pages) STMICROELECTRONICS

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Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

VR =VRRM

µA

Tj = 100°C

1mA

VF**

Forward voltage drop

Tj = 125°C

IF =8A

0.85

Tj = 125

°CIF =16A

1.05

Tj =25

°CIF =16A

1.15

Pulse test :* tp=5ms,

δ <2%

** tp = 380

µs, δ <2%

To evaluate the conduction losses use the following equation :

P=0.65xIF(AV) + 0.025 x IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (Per diode)

Symbol

Test Conditions

Typ.

Max.

Unit

trr

Tj = 25°C

IF = 0.5A

IR =1A

Irr = 0.25A

IF =1A

VR = 30V

dIF/dt = -50A/

µs35

tfr

Tj = 25°C

IF =1A

VFR =1.1xVF max

dIF/dt = -50A/

µs15

VFP

Tj = 25°C

IF =1A

dIF/dt = -50A/

µs2

RECOVERY CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220AB / D

2PAK/I2PAK

Per diode

2.5

°C/W

Total

1.4

ISOWATT220AB

Per diode

5.1

Total

4.05

TO-220FPAB

Per diode

5.7

Total

4.6

Rth (c)

Coupling

TO-220AB / D

2PAK/I2PAK

0.25

°C/W

ISOWATT220AB

3.0

TO-220FPAB

3.5

When diodes 1 and 2 are used simultaneously :

∆Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCES

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