BYW51F datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Obsolete

Product(s)

- Obsolete

Product(s)

Obsolete

Product(s)

- Obsolete

Product(s)

BYW51/F/G/FP/R-200

4/9

1E-3

1E-2

1E-1

1E+0

0.1

1.0

t(s)

K=[Zth(j-c)/Rth(j-c)]

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 5-1: Relative variation of thermal impedance

junction to case versus pulse duration (D

2PAK,

TO-220AB).

1E-2

1E-1

1E+0

1E+1

0.1

1.0

t(s)

K=[Zth(j-c)/Rth(j-c)]

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 5-2: Relative variation of thermal impedance

junction

case

versus

pulse

duration

(ISOWATT220AB, TO-220FPAB).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

VFM(V)

IFM(A)

Tj=125°C

Tj=25°C

Fig. 6: Forward voltage drop versus forward

current (maximum values, per diode).

100

200

100

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode).

1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Tc=25°C

Tc=100°C

Tc=75°C

δ=0.5

Fig. 4-3: Non repetitive surge peak forward current

versus overload duration (TO-220FPAB).

100

200

500

100

200

500

dIF/dt(A/µs)

Qrr(nC)

IF=IF(av)

90% confidence

Tj=125°C

Fig. 8: Reverse recovery charges versus dIF/dt

(per diode).

BYW51F Datasheet(PDF) 4 Page - STMicroelectronics

BYW51F Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL