CSD87588N

SLPS384D – MARCH 2013 – REVISED APRIL 2015

www.ti.com

5.4 Power Block Performance

TA = 25°C (unless otherwise noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VIN = 12 V, VGS = 5 V

VOUT = 1.3 V, IOUT = 15 A

PLOSS

Power Loss(1)

2.1

W

ƒSW = 500 kHz

LOUT = 0.29 µH, TJ = 25ºC

TG to TGR = 0 V

IQVIN

VIN Quiescent Current

10

µA

BG to PGND = 0 V

(1)

Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins and

using a high current 5 V driver IC.

5.5 Electrical Characteristics

TA = 25°C (unless otherwise stated)

Q1 FET

Q2 FET

PARAMETER

TEST CONDITIONS

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250 μA

30

30

V

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 24 V

1

1

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 20

100

100

nA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = 250 μA

1.1

1.9

1.1

1.9

V

VGS = 4.5 V, IDS = 15 A

10.4

12.5

3.5

4.2

RDS(on)

Drain-to-Source On Resistance

m

Ω

VGS = 10 V, IDS = 15 A

8

9.6

2.9

3.5

gƒs

Transconductance

VDS = 10 V, IDS = 15 A

43

93

S

DYNAMIC CHARACTERISTICS

CISS

Input Capacitance (1)

566

736

2310

3000

pF

VGS = 0 V, VDS = 15 V,

COSS

Output Capacitance (1)

341

444

682

887

pF

ƒ = 1 MHz

CRSS

Reverse Transfer Capacitance (1)

10.3

13.4

62

80.4

pF

RG

Series Gate Resistance (1)

1.2

2.4

1.1

2.2

Ω

Qg

Gate Charge Total (4.5 V) (1)

3.2

4.1

13.7

17.9

nC

Qgd

Gate Charge - Gate-to-Drain

0.7

4.3

nC

VDS = 15 V,

IDS = 15 A

Qgs

Gate Charge - Gate-to-Source

1.4

4.3

nC

Qg(th)

Gate Charge at Vth

0.8

2.8

nC

QOSS

Output Charge

VDD = 12 V, VGS = 0 V

7

18.6

nC

td(on)

Turn On Delay Time

7.3

12.1

ns

tr

Rise Time

31.6

36.7

ns

VDS = 15 V, VGS = 4.5 V,

IDS = 15 A, RG = 2 Ω

td(off)

Turn Off Delay Time

10.2

20.1

ns

tƒ

Fall Time

5.0

6.3

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

IDS = 15 A, VGS = 0 V

0.85

0.78

V

Qrr

Reverse Recovery Charge

12.5

26.7

nC

Vdd = 15 V, IF = 15 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

16

23

ns

(1)

Specified by design

4

Submit Documentation Feedback

Copyright © 2013–2015, Texas Instruments Incorporated