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ESDA6V1S6RL Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDA6V1S6RL Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient C Capacitance Rd Dynamic resistance VF Forward voltage drop ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Symbol Parameter Value Unit VPP Electrostatic discharge MIL STD 883C - Method 3015-6 25 kV PPP Peak pulse power (8/20 µs) 200 W Tstg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C °C TL Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C) Types VBR @IR IRM @VRM Rd αTC VF @IF min. max. max. typ. max. typ. max. note1 note1 note 2 note 3 0V bias VV mA µAV Ω 10 -4/ °CpF V mA ESDA6V1S3 6.1 7.2 1 2 5.25 0.5 6 120 1.25 200 ESDA6V2S6 6.2 7.2 1 2 5.25 0.5 6 100 1.25 200 Note 1 : Between any I/O pin and Ground Note 2 : Square pulse, IPP = 25A for ESDA6V1S3 and IPP = 15A for ESDA6V2S6 , tp = 2.5µs Note 3 : ∆VBR = αT* [Tamb-25] * VBR(25°C) ESDA6V1S3 / ESDA6V2S6 2/7 |
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