ESDA6V1S6RL datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

100

1000

2000

Ppp(W)

tp(

µs)

Fig. 2 : Peak pulse power versus exponential

pulse duration (Tj initial = 25

°C).

100

125

150

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ppp[Tj initial]/Pp[Tj initial=25

°C]

Tj initial(

°C)

Fig. 1 : Peak power dissipation versus initial

junction temperature.

100

C(pF)

F=1MHz

Vosc=30mV

V (V)

Fig. 4

: Capacitance versus reverse applied

voltage (typical values).

10 12 14 16 18 20 22 24 26 28 30 32

0.1

1.0

10.0

50.0

Ipp(A)

tp=2.5

µs

(V)

Fig. 3 : Clamping voltage versus peak pulse

current (Tj initial = 25

°C).

Rectangular waveform tp = 2.5

µs.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.01

0.10

1.00

5.00

(A)

Tj=25

°C

(V)

Fig. 6 : Peak forward voltage drop versus peak

forward current (typical values).

100

125

100

200

I [Tj] / I [Tj=25

°C]

Tj(

°C)

Fig. 5 : Relative variation of leakage current versus

junction temperature (typical values).

ESDA6V1S3 / ESDA6V2S6

4/7

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