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TM100 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # TM100
Description  MEDIUM POWER GENERAL USE NON-INSULATED TYPE
PDF  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

TM100 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM100SZ-M
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
M
400
480
320
400
480
320
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/
µs
W
W
V
V
A
°C
°C
N·m
kg·cm
N·m
kg·cm
g
Conditions
Three-phase, half-wave, TC=122
°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=150
°C
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
155
100
2000
1.7
× 104
50
5.0
0.5
10
5.0
2.0
–40~+150
–40~+125
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
µs
V
V
mA
°C/W
°C/W
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Test conditions
Tj=150
°C, VRRM applied
Tj=150
°C, VDRM applied
Tj=150
°C, ITM=300A, instantaneous meas.
Tj=150
°C, VD=2/3VDRM
Tj=25
°C, VD=6V, RL=2Ω
Tj=150
°C, VD=1/2VDRM
Tj=25
°C, VD=6V, RL=2Ω
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Min.
—
—
—
200
—
0.25
15
—
—
Typ.
—
—
—
—
—
—
—
—
—
Max.
30
30
1.15
—
3.0
—
100
0.2
0.3



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