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OPA188AIDBVT Datasheet(PDF) 21 Page - Texas Instruments

Part # OPA188AIDBVT
Description  OPA188 Precision, Low-Noise, Rail-to-Rail Output, 36-V, Zero-Drift Operational Amplifier
PDF  42 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

OPA188AIDBVT Datasheet(HTML) 21 Page - Texas Instruments

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Input Voltage (V)
0
0.5
1
1.5
0
0.025
0.05
0.1
Load
0.075
2
D001
21
OPA188
www.ti.com
SBOS642C – MARCH 2013 – REVISED JANUARY 2020
Product Folder Links: OPA188
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Copyright © 2013–2020, Texas Instruments Incorporated
Typical Applications (continued)
9.2.1.1 Design Requirements
The design requirements are:
•
Supply voltage: 5 V dc
•
Input: 0 V to 2 V dc
•
Output: 0 mA to 100 mA dc
9.2.1.2 Detailed Design Procedure
The V-I transfer function of the circuit is based on the relationship between the input voltage, VIN, and the three
current sensing resistors, RS1, RS2, and RS3. The relationship between VIN and RS1 determines the current that
flows through the first stage of the design. The current gain from the first stage to the second stage is based on
the relationship between RS2 and RS3.
For a successful design, pay close attention to the dc characteristics of the operational amplifier chosen for the
application. To meet the performance goals, this application benefits from an operational amplifier with low offset
voltage, low temperature drift, and rail-to-rail output. The OPA188 CMOS operational amplifier is a high-
precision, ultra-low offset, ultra-low drift amplifier, optimized for low-voltage, single-supply operation, with an
output swing to within 15 mV of the positive rail. The devices in the OPA188 family use chopping techniques to
provide low initial offset voltage and near-zero drift over time and temperature. Low offset voltage and low drift
reduce the offset error in the system, making this device appropriate for precise dc control. The rail-to-rail output
stage of the OPA188 makes sure that the output swing of the operational amplifier is able to fully control the gate
of the MOSFET devices within the supply rails.
A detailed error analysis, design procedure, and additional measured results are given in reference design
TIPD102, a step-by-step process to design a High-Side Voltage-to-Current (V-I) Converter.
For step-by-step design procedure, circuit schematics, bill of materials, PCB files, simulation results, and test results, refer to Precision
Design Guide TIPD102, High-Side Voltage-to-Current (V-I) Converter.
9.2.1.3 Application Curves
Figure 45 shows the measured transfer function for the high-side voltage-to-current converter shown in
Figure 44 .
Figure 45. Measured Transfer Function for High-Side V-I Converter



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