OPA196IDBVT datasheet(5/52 Pages) TI2

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OPA196, OPA2196, OPA4196

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SBOS869 – JULY 2017

Product Folder Links: OPA196 OPA2196 OPA4196

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Short-circuit to ground, one amplifier per package.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, VS = (V+) – (V–)

±20

(+40, single supply)

Signal input pins

Voltage

Common-mode

(V–) – 0.5

(V+) + 0.5

Differential

(V+) – (V–) + 0.2

Current

±10

Output short circuit(2)

Continuous

Temperature

Operating

–40

150

°C

Junction

150

Storage, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

OPAx196

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±3000

V(ESD)

Electrostatic

discharge

OPA196

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

±1000

OPA2196

±500

OPA4196

±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage, VS = (V+) – (V–)

4.5 (±2.25)

36 (±18)

Specified temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information: OPA196

THERMAL METRIC(1)

OPA196

UNIT

8 PINS

5 PINS

D (SOIC)

DGK

(VSSOP)

DBV (SOT)

RθJA

Junction-to-ambient thermal resistance

115.8

180.4

158.8

°C/W

RθJC(top)

Junction-to-case(top) thermal resistance

60.1

67.9

60.7

°C/W

RθJB

Junction-to-board thermal resistance

56.4

102.1

44.8

°C/W

ψJT

Junction-to-top characterization parameter

12.8

10.4

1.6

°C/W

ψJB

Junction-to-board characterization parameter

55.9

100.3

4.2

°C/W

RθJC(bot)

Junction-to-case(bottom) thermal resistance

N/A

°C/W

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