1

Characteristics

Table 1. Absolute Ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short

circuited)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

45

V

IF(RMS)

Forward rms current

45

A

IF(AV)

Average forward current, δ = 0.5, square wave

TC = 120 °C

30

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

380

A

PARM

Repetitive peak avalanche power

tp = 10 µs , Tj = 125 °C

900

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

2.5

°C/W

For more information, please refer to the following application note :

•

AN5046 : Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT™ packages

Table 3. Static electrical characteristics (anode terminals short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

300

µA

Tj = 125 °C

-

20

80

mA

VF (1)

Forward voltage drop

Tj = 25 °C

IF = 15 A

-

0.56

V

Tj = 125 °C

-

0.41

0.46

Tj = 25 °C

IF = 30 A

-

0.64

Tj = 125 °C

-

0.50

0.56

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.43 x IF(AV) + 0.00433 IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS3045DJF

Characteristics

DS6592 - Rev 5

page 2/9