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STPS3045DJF Datasheet(PDF) 4 Page - STMicroelectronics |
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STPS3045DJF Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Figure 5. Reverse leakage current versus reverse voltage applied (typical values) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 5 10 15 20 25 30 35 40 45 I (mA) R T = 25 °C j T = 50 °C j T = 75 °C j T = 125 °C j T = 150 °C j T = 100 °C j V (V) R Figure 6. Junction capacitance versus reverse voltage applied (typical values) 100 1000 10000 1 1 0 100 C(pF) V (V) R F = 1 MHz V = 30 mV T = 25 °C osc RMS j Figure 7. Forward voltage drop versus forward current 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 T = 125 °C (Maxim um v alues) j T = 25 °C (Maxim um v alues) j V (V) F T = 125 °C (Typical v alues) j I (A) F Figure 8. Thermal resistance junction to ambient versus copper surface under tab 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 SCu(cm²) Rth(j-a) (°C/W) PowerFlat™_5X6 epoxy printed board FR4, eCu = 35 µm STPS3045DJF Characteristics (curves) DS6592 - Rev 5 page 4/9 |
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