1

Characteristics

Table 1. Absolute ratings (limiting values, at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage, Tj = -40 °C to +175 °C

150

V

IF(RMS)

Forward rms current

15

A

IF(AV)

Average forward current

TL = 150 °C, δ = 0.5 square wave

1

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

50

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

108

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range(1)

-40 to +175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

30

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

0.2

1.0

µA

Tj = 125 °C

-

0.2

1.0

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1 A

-

0.78

0.82

V

Tj = 125 °C

-

0.62

0.67

Tj = 25 °C

IF = 2 A

-

0.85

0.89

Tj = 125 °C

-

0.69

0.75

1. tp = 5 ms, δ < 2%

2. tp = 380 μs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.59 x IF(AV) + 0.08 x IF2(RMS)

STPS1150-Y

Characteristics

DS7258 - Rev 3

page 2/9