1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

P

(W)

F(AV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.0

0.2

0.4

0.6

0.8

1.0

1.2

I

(A)

F(AV)

T

δ =tp/T

tp

δ =1

δ =0.5

δ =0.05

δ =0.1

δ =0.2

Figure 2. Average forward current versus ambient

temperature (δ = 0.5)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

2 5

5 0

7 5

100

125

150

175

T

δ

= t / T

p

tp

I

( A)

F(AV)

Rth(j-a) = Rth(j-l)

Tamb (°C)

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 4. Relative variation of thermal impedance junction

to ambient versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

SMA

Z

/R

th(j-a)

th(j-a)

Single pulse

t ( s)

p

Figure 5. Reverse leakage current versus reverse voltage

applied (typical values)

I (µA)

R

1.E- 03

1.E- 02

1.E- 01

1.E+ 00

1.E+ 01

1.E+ 02

1.E+ 03

1.E+ 04

0

25

50

75

100

125

150

T =125°C

j

T =150°C

j

T =100°C

j

T =50°C

j

T =25°C

j

T =75°C

j

V ( V)

R

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

1

10

100

1

1 0

100

1000

F = 1 MHz

V

= 30mV

T = 25 °C

OSC

RMS

j

V (V)

R

STPS1150-Y

Characteristics (curves)

DS7258 - Rev 3

page 3/9