HEXFET

®

Power MOSFET

Dynamic dv/dt Rating

175°C Operating Temperature

Fast switching

Ease of Paralleling

Simple Drive Requirements

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50watts. The low

thermal resistance and low package cost of the TO-220 contribute to its

Pin1–Gate

Pin2–Drain

Pin3–Source

wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter

Max.

Units

60

300

A

200

W

Linear Derating Factor

1.5

W/°C

Gate-to-Source Voltage

±20

V

23

mJ

dv/dt

Peak Diode Recovery dv/dt

④

5.9

V/ns

Operating Junction and

Storage Temperature Range

–55 to +175

Soldering Temperature, for 10 seconds

300(1.6mm from case)

ْ°C

Mounting Torque,6-32 or M3 screw

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Junction-to-case

—

—

0.65

Case-to-Sink, Flat, Greased Surface

—

0.50

—

Junction-to-Ambient

—

—

62

ْ°C /W

1

75NF75