75NF75 datasheet(2/2 Pages) ESTEK

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HEXFET

Power MOSFET

Electrical Characteristics @TJ=25 ْ°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

—

VGS=0V,ID=250uA

△V(BR)DSS/

△TJ

Breakdown Voltage Temp. Coefficient

—

0.074

—

V/°C Reference to 25°C,ID=1mA

RDS(on)

Static Drain-to-Source On-resistance

—

13.0

Ω VGS=10V,ID=40A ⑤

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

VDS=VGS, ID=250

μA

gfs

Forward Transconductance

—

VDS=25V,ID=40A ⑤

—

VDS=75V,VGS=0V

IDSS

Drain-to-Source Leakage current

—

250

μA

VDS=60V,VGS=0V,TJ=150°C

Gate-to-Source Forward leakage

—

100

VGS=20V

IGSS

Gate-to-Source Reverse leakage

—

-100

VGS=-20V

Total Gate Charge

—

160

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain ("Miller") charge

—

ID=40A

VDS=60V

VGS=10V See Fig.6 and 13⑤

td(on)

Turn-on Delay Time

—

Rise Time

—

td(off)

Turn-Off Delay Time

—

Fall Time

—

VDD=38V

ID=40A

RG=2.5

VGS=10V See Figure 10⑤

Internal Drain Inductance

—

4.5

—

Internal Source Inductance

—

7.5

—

Between lead,

6mm(0.25in.)

from

package

and center of

die contact

Ciss

Input Capacitance

—

3820

—

Coss

Output Capacitance

—

610

—

Crss

Reverse Transfer Capacitance

—

130

—

VGS=0V

VDS=25V

=1.0MHZ See Figure 5

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max.

Units

Test Conditions

Continuous Source Current

(Body Diode)

—

ISM

Pulsed Source Current

(Body Diode)

②

—

300

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

1.3

TJ=25°C,IS=40A,VGS=0V ⑤

trr

Reverse Recovery Time

—

100

150

Qrr

Reverse Recovery Charge

—

410

610

TJ=25°C,IF=40A

di/dt=100A/

μs ⑤

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

③

Starting TJ = 25°C, L = 370mH, RG = 25

Ω, IAS = 40A,

VGS=10V (See Figure 12)

④

ISD

≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS,TJ ≤ 175°C

⑤

Pulse width

≤ 400μs; duty cycle ≤ 2%.

①

Calculated continuous current based on maximum

allowable junction temperature. Package limitation

current is 75A.

②

Repetitive rating; pulse width limited by max. junction

temperature. (See fig. 11)

75NF75

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