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TLV62565, TLV62566

SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016

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Copyright © 2013–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal.

8 Specifications

8.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage(2)

VIN, EN, PG

–0.3

7

V

SW

–0.3

VIN+0.3

V

FB

–0.3

3.6

V

Sink current, IPG

PG

660

µA

Operating junction temperature, TJ

–40

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

V

(1)

Refer to the Application and Implementation section for further information.

8.3 Recommended Operating Conditions

(1)

MIN

TYP

MAX

UNIT

VIN

Input voltage, VIN

2.7

5.5

V

TA

Operating ambient temperature

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.4 Thermal Information

THERMAL METRIC(1)

TLV62565, TLV62566

UNIT

DBV (5 Pins)

RθJA

Junction-to-ambient thermal resistance

208.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

73.7

°C/W

RθJB

Junction-to-board thermal resistance

36.1

°C/W

ψJT

Junction-to-top characterization parameter

2.3

°C/W

ψJB

Junction-to-board characterization parameter

35.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W