© 2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAV99 Rev. 1.1.0

2

Absolute Maximum Ratings(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Note:

1. These ratings are based on a maximum junction temperature of 150

°C.

These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed

or low-duty cycle operations.

Thermal Characteristics(2)

Values are at TA = 25°C unless otherwise noted.

Note:

2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VRRM

Maximum Repetitive Reverse Voltage

70

V

IF(AV)

Average Rectified Forward Current

200

mA

IFSM

Non-Repetitive Peak

Forward Surge Current

Pulse Width = 1.0 Second

1.0

A

Pulse Width = 300 Microseconds

8.0

TSTG

Storage Temperature Range

-55 to +150

°C

TJ

Operating Junction Temperature Range

-55 to +150

°C

Symbol

Parameter

Value

Unit

PD

Power Dissipation

350

mW

RθJA

Thermal Resistance, Junction to Ambient

357

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

VR

Breakdown Voltage, per Diode

IR = 100 μA70

V

VF

Forward Voltage, per Diode

IF = 1 mA

715

mV

IF = 10 mA

855

IF = 50 mA

1.00

V

IF = 150 mA

1.25

IR

Reverse Leakage, per Diode

VR = 70 V

2.5

μA

VR = 25 V, TA = 150°C30.0

VR = 70 V, TA = 150°C50.0

CT

Total Capacitance, per Diode

VR = 0 V, f = 1.0 MHz

1.5

pF

trr

Reverse-Recovery Time,

per Diode

IF = IR = 10 mA,

IRR = 1 mA,

RL = 100 Ω

6.0

ns