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TPS25221

SLVSDT3D – JANUARY 2018 – REVISED DECEMBER 2019

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Copyright © 2018–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage range on IN, OUT, EN, FAULT,ILIM

–0.3

6

V

Voltage range from IN to OUT

–6

6

Continuous FAULT sink current

0

25

mA

ILIM source current

0

1

mA

Maximum junction temperature, Tj

Internally Limited

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3)

Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing tests levels, not failure threshold.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101

or ANSI/ESDA/JEDEC JS-002(2)

±500

V

IEC 61000-4-2 contact discharge(3)

±8000

V

IEC 61000-4-2 air-gap discharge(3)

±15000

V

7.3 Recommended Operating Conditions

Voltages are respect to GND (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Supply voltage

IN

2.5

5.5

V

VEN

Input voltage

EN

0

5.5

V

VIH

High-level input voltage

EN

1.7

V

VIL

Low-level input voltage

EN

0.66

V

ICON

Output continuous current

OUT

0

2

A

RILIM

Current-limit threshold resistor range (nominal 1%) from ILIM to GND

20

210

kΩ

I/FAULT

Sink current into FAULT

FAULT

0

10

mA

TJ

Operating junction temperature

–40

125

°C

(1)

Proper thermal design is required to ensure TJ <125°C for best long term reliability. This is particularly important at higher currents, see

the Semiconductor and IC Package Thermal Metrics application report.

7.4 Thermal Information

THERMAL METRIC(1)

TPS25221

UNIT

DBV (SOT-23)

DRV (WSON)

6-PIN

6-PIN

RθJA

Junction-to-ambient thermal resistance

193.2

83

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

127.1

100.5

°C/W

RθJB

Junction-to-board thermal resistance

65.6

46.5

°C/W

ψJT

Junction-to-top characterization parameter

49.0

8.7

°C/W

ψJB

Junction-to-board characterization parameter

65.3

46.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

--

24.4

°C/W