STTH1302

Characteristics

DocID8794 Rev 4

5/11

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R

th (j-a) (°C/W )

D²PAK

Epoxy printed board FR4, copper thickness = 35 µm

SCu(cm²)

Figure 7: Reverse recovery charges versus dIF/dt

(typical values, per diode)

Figure 8: Reverse recovery time versus dIF/dt

(typical values, per diode)

Figure 9: Peak reverse recovery current versus

dIF/dt (typical values, per diode)

Figure 10: Relative variation of dynamic

parameters versus junction temperature

Figure 11: Thermal resistance junction to ambient versus copper surface under tab

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dIF/dt (A/µs)

Qrr (nC)

IF = 6.5 A

VR= 200 V

Tj = 125 °C

Tj = 25 °C

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dIF/dt (A/µs)

trr (ns)

IF = 6.5 A

VR= 100 V

Tj = 125 °C

Tj = 25 °C

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dIF/dt (A/µs)

IRM (A)

IF = 6.5 A

VR= 100 V

Tj = 125 °C

Tj = 25 °C

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Tj (°C)

IRM

Qrr

IF= 6.5 A

VR= 100 V

Reference: Tj = 125 °C