Characteristics

STTH1302

2/11

DocID8794 Rev 4

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

V

IF(RMS)

Forward rms current

20

A

IF(peak)

Average forward current

δ = 0.5, square wave

TC = 155 °C

Per diode

6.5

A

TC = 145 °C

Per device

13

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

70

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature

175

°C

Table 3: Thermal parameter

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

3

°C/W

Total

1.9

Rth(c)

Coupling

0.8

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

6

µA

Tj = 125 °C

-

3

60

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 6.5 A

-

1.10

V

Tj = 125 °C

-

0.81

0.95

Tj = 25 °C

IF = 13 A

-

1.25

Tj = 125 °C

-

0.95

1.10

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.80 x IF(AV) + 0.023 x IF2(RMS)